Direct integration of inorganic nanowires with micron-sized electrodes

ABSTRACT

An electronic device such as a sensor or a NEMS. The electronic device comprises at least one substrate; a plurality of electrodes disposed on the substrate; and at least one nano-wire growing from an edge of a first electrode to an edge of a second electrode. A method for making an electrode structure by providing a substrate; forming a plurality of electrodes on the substrate; growing at least one nano-wire from the edge of a first electrode; and connecting the at least one nano-wire to the edge of a second electrode is also disclosed.

BACKGROUND OF INVENTION

This invention relates to an electronic device, such as a sensor or anano-electromechanical system (NEMS). More particularly, the inventionrelates to a method of integrating inorganic nano-wires with micronsized electrode structures.

As device structures become increasingly miniaturized, the integrationof nano-building blocks, such as nano-wires, with a nano-device is ofgreat interest. As the size of device structures decrease, suchintegration becomes increasingly complex. Inorganic wires, often chosenfor applications in devices due to their low work function, highfrequency, or quantum transport properties, are independentlysynthesized by techniques such as vapor transport, laser ablation, orelectrochemical filling of porous anodic alumina templates. Theinorganic wires are then assembled onto a final substrate or device ofinterest using techniques such as random dispersion, micro-fluidics, ornano imprint lithography.

One problem associated with separate assembly in the integration ofnano-wires and devices is the difficulty in scaling up the involvedprocesses, as many of such assembly steps and processes are distinctfrom each other. While hybrid integration strategies enable scaling upand quickening of some processes, a method of direct horizontalintegration of the nano-wire with the device architecture of interest ishighly desirable in microelectronics processing and device fabrication.

The current methods for integrating a nano-wire and a nano-device do notenable direct integration in minimal turnaround times nor in high yield.Therefore, what is needed is an electronic device that is directlyintegrated with its attendant nano-wires. What is also needed is amethod for direct integration of nano-wire and nano-device assembly thatis applicable to a variety of nano-wire material compositions andapplications. What is also needed is an assimilation of the directintegration method into existing micro and nanotechnology and in micro-and nano-lithography techniques.

BRIEF SUMMARY OF THE INVENTION

The present invention meets these and other needs by providing a methodfor making an electrode structure comprising at least one substrate, aplurality of electrodes disposed on the substrate, and at least onenano-wire originating from an edge of a first electrode and extending toan edge of a second electrode. An electronic device, such as anano-electromechanical system (NEMS), transistor, photo-detector, lightemitting diode, super-conducting device, sensor, and the like thatincorporates the electrode structure described above, is also provided.

Accordingly, one aspect of the invention is to provide an electronicdevice. The electronic device comprises: at least one substrate; aplurality of electrodes, wherein the plurality of electrodes aredisposed on the substrate; and at least one nano-wire wherein thenano-wire grows from an edge of a first electrode to an edge of a secondelectrode.

A second aspect of the invention is to provide an electrode structure.The electrode structure comprises: at least one electrode, the at leastone electrode having at least one edge portion; and at least onenano-wire originating from the edge portion.

A third aspect of the invention is to provide an electronic device. Theelectronic device comprises: at least one substrate, the at least onesubstrate comprising at least one of a semi-conducting material, aninsulating material, and combinations thereof; and an electrodestructure disposed on the substrate. The electrode structure comprises aplurality of electrodes and at least one nano-wire, wherein thenano-wire originates from an edge portion of a first electrode andextends to an edge of a second electrode.

A fourth aspect of the invention is to provide a method for making anelectrode structure, wherein the electrode structure comprises at leastone substrate, a plurality of electrodes disposed on the substrate, andat least one nano-wire originating from an edge of a first electrode andextending to an edge of a second electrode. The method comprises:providing the substrate; forming a plurality of electrodes on thesubstrate; growing the at least one nano-wire from the edge of the firstelectrode; and connecting the at least one nano-wire to the edge of thesecond electrode.

These and other aspects, advantages, and salient features of the presentinvention will become apparent from the following detailed description,the accompanying drawings, and the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view of an electronic device of the presentinvention;

FIG. 2 is a micrograph of a nano-wire growing from a catalyst particle;

FIG. 3 is a schematic view of an electronic device of the presentinvention in which a nano-wire is coupled to a second electrode by alithographically defined contact;

FIG. 4 is a micrograph showing an array of gold electrodes deposited ona silicon substrate; and

FIG. 5 is a micrograph showing a plurality of nano-wires grown from anelectrode; and

FIG. 6 is a schematic view of a cross-bar architecture of an array ofnano-wires.

DETAILED DESCRIPTION OF THE INVENTION

In the following description, like reference characters designate likeor corresponding parts throughout the several views shown in thefigures. It is also understood that terms such as “top,” “bottom,”“outward,” “inward,” and the like are words of convenience and are notto be construed as limiting terms.

The invention involves synthesis of inorganic nano-wires and nano-rodsat the edge of lithographically defined structures on a substrate or adevice. Within the scope of this invention, the terms “inorganicnano-wires” and “inorganic nano-tubes” are understood to include: anyoxide, nitride, boride, or carbide of a metal, boron, or silicon;elemental and compound semiconductors; and metals.

Referring to the drawings in general and to FIG. 1 in particular, itwill be understood that the illustrations are for the purpose ofdescribing a preferred embodiment of the invention and are not intendedto limit the invention thereto. Turning to FIG. 1, a schematicrepresentation of an electronic device 20 of the present invention isshown. Among the electronic devices that fall within the scope of thepresent invention are core-shell structures, hetero-epitaxialnano-wires, GATE dielectric devices, biosensors, chemical sensors,cross-bar arrays, nano-electromechanical system (NEMS) devices,transistors, photo-detectors, light emitting diodes (LEDs),super-conducting devices, laser devices, combinations thereof, and thelike. However, it will be appreciated by those skilled in the art thatother electronic devices will fall within the scope of the invention.

One aspect of the present invention is to provide an electronic device20. Electronic device 20 comprises at least one substrate 40; aplurality of electrodes 70 disposed on substrate 40; and at least onenano-wire 140 that grows from an edge 100 of a first electrode 60 to anedge 120 of a second electrode 80. In one embodiment, the at least onenano-wire 140 comprises a single crystal material. In anotherembodiment, the at least one nano-wire 140 comprises a polycrystallinematerial. In a third embodiment, nano-wire 140 comprises an amorphousmaterial.

Substrate 40 comprises at least one of a semi-conducting material, aninsulating material, and combinations thereof. In one embodiment,substrate 40 is a semi-conducting material comprising at least one ofsilicon, germanium, indium tin oxide, silicon carbide, and combinationsthereof. In another embodiment, substrate 40 is an insulating materialcomprising at least one of diamond and a metal oxide. Non-limitingexamples of such metal oxides include magnesium oxide, sapphire, lithiumaluminate, and combinations thereof.

At least one electrode of first electrode 60 and second electrode 80comprises at least one noble metal, such as, but not limited to,platinum, gold, silver, and combinations thereof. In another embodiment,the at least one electrode comprises at least one of tungsten, niobium,tantalum, and combinations thereof. In a third embodiment, at least oneof first electrode 60 and second electrode 80 further includes acatalyst 180, wherein the catalyst 180 comprises at least at least oneof gold, nickel, iron, chromium, cobalt, and combinations thereof.

The at least one nano-wire 140 comprises at least one of asemi-conductor, a carbide, an oxide, a nitride, a boride, andcombinations thereof. In one embodiment, the at least one nano-wirecomprises lanthanum hexaboride (LaB₆). In another embodiment, the atleast one nano-wire 140 is a semi-conductor comprising at least one ofsilicon, germanium, a III-V compound, a II-VI compound, a IV-VIcompound, and combinations thereof. In another embodiment, the at leastone nano-wire 140 is a carbide comprising at least one of siliconcarbide, niobium carbide, molybdenum carbide, tantalum carbide, hafniumcarbide, tungsten carbide, and combinations thereof.

In one embodiment of the present invention, the at least one nano-wire140 is oriented perpendicular to first electrode 60. In anotherembodiment, the at least one nano-wire 140 is oriented by at least oneof an electric field, a magnetic field, and combinations thereof. Inanother embodiment, the at least one nano-wire 140 is oriented by a gasflow. Orientation of the at least one nano-wire 140 may take placeduring growth of the at least one nano-wire 140.

The at least one nano-wire 140 is coupled to and is grown from an edge100 of first electrode 60. The at least on nano-wire 140 is grown from aportion of catalyst 180 disposed on edge 100 of first electrode 60.Catalyst 180 may be present as a particle or as a film deposited onfirst electrode 60. The at least one nano-wire grows from catalyst 180via one of a vapor-solid and a vapor-liquid-solid (VLS) growth mechanismin which a particle of catalyst 180 acts as a seed for growing nano-wire140. FIG. 2 is a micrograph of a nano-wire 140 growing from a particleof catalyst 180.

The at least one nano-wire 140 is coupled to second electrode 80. In oneembodiment, the particle of catalyst 180 is attached to an end of the atleast one nano-wire 140 during growth, and thus precedes the nano-wire140 in its growth direction towards second electrode 80, where catalyst180 serves as a terminal point for the at least one nano-wire 140 onsecond electrode 80 (FIG. 1). Alternatively, the at least one nano-wire140 makes direct contact with second electrode 80. In yet anotherembodiment, shown in FIG. 3, the at least one nano-wire 140 is coupledto second electrode 80 by a lithographically defined contact 200deposited after growth of the at least one nano-wire 140. Contact 200comprises any suitable contact material, such as, but not limited to, aconductive metal, and may be deposited by physical vapor depositionmeans known in the art.

In one embodiment, the at least one nano-wire 140 is a nano-ribbon. In athird embodiment, the at least one nano-wire 140 is a cylindrical wirewith a diameter in a range from about 5 nm to about 300 nm. Morepreferably, the at least one nano-wire 140 has a diameter in a rangefrom about 5 nm to about 100 nm. In a fourth embodiment, the at leastone nano-wire 140 has a length in a range from about 50 nm to about50,000 nm. More preferably, nano-wire 140 has a length in a range fromabout 200 nm to about 20,000 nm.

The plurality of electrodes 70 may be arrayed on substrate 40 andconnected by the at least one nano-wire so as to provide an architecturefor electronic device 20. A cross-bar architecture 300 is shown in FIG.6.

Another aspect of the present invention is to provide an electrodestructure comprising at least one electrode 70 having at least one edgeportion 100 and at least one nano-wire 140 originating from edge portion100. The at least one electrode 70, in one embodiment, comprises atleast one noble metal, such as, but not limited to, platinum, gold,silver, and combinations thereof. In another embodiment, the at leastone electrode comprises at least one of tungsten, niobium, tantalum, andcombinations thereof. In a third embodiment, the at least one electrodeincludes a catalyst 180. The catalyst 180 comprises at least at leastone of gold, nickel, iron, chromium, cobalt, and combinations thereof.

The at least one nano-wire 140 of the electrode structure comprises atleast one of a semi-conductor, a carbide, an oxide, a nitride, a boride,and combinations thereof. In one particular embodiment, the at least onenano-wire 140 comprises lanthanum hexaboride (LaB₆). In anotherembodiment, nano-wire 140 comprises a semi-conductor. The semi-conductorcomprises at least one of silicon, germanium, a III-V compound, a II-VIcompound, a IV-VI compound, and combinations thereof. In anotherembodiment, nano-wire 140 comprises a carbide. The carbide comprises atleast one of silicon carbide, niobium carbide, molybdenum carbide,tantalum carbide, hafnium carbide, tungsten carbide, and combinationsthereof.

The at least one nano-wire 140 of the electrode structure may have apredetermined orientation with respect to the at least one electrode 70.For example, the at least one nano-wire 140 may be orientedperpendicular to the at least one electrode 70. External forces orfields may also be used, either during growth of nano-wire 140, or aftergrowth of nano-wire 140, to orient the at least one nano-wire withrespect to the electrode. In one embodiment, the at least one nano-wireis oriented by applying at least one of a magnetic field, an electricfield, and combinations thereof.

The electrode structure can be used to build an array of nano-wires andelectrodes, such as the cross-bar array 300 shown in FIG. 6. Oneapplication for such arrays is in memory devices and sensors.

Another aspect of the present invention is to provide a method formaking an electrode structure for the electronic device 20 disclosedherein, wherein the electrode structure comprises at least one substrate40, a plurality of electrodes 70 disposed on substrate 40, and at leastone nano-wire 140 originating from edge 100 of first electrode 60 andextending to edge 120 of second electrode 80. The method comprises thesteps of: providing substrate 40; forming a plurality of electrodes 70on substrate 40; growing the at least one nano-wire 140 from an edge 100of first electrode 60; and connecting the at least one nano-wire 140 toedge 120 of second electrode 80.

Substrate 40 comprises at least one of a semi-conducting material, aninsulating material, and combinations thereof. The semi-conductingmaterials that may comprise the substrate include, but are not limitedto, at least one of silicon, germanium, indium tin oxide, siliconcarbide, combinations thereof, and the like. Non-limiting examples ofinsulating material include diamond and metal oxides, such as, but notlimited to, at least one of magnesium oxide, sapphire, lithiumaluminate, and combinations thereof.

In one embodiment of the present invention, the step of providing thesubstrate 40 further includes cleaning the substrate 40. In oneembodiment substrate 40 is cleaned in a chemical bath (such as sulfuricacid) to obtain a thin native oxide film on the surface of thesubstrate. Alternatively, substrate 40 may be cleaned by othertechniques that are known in the art, such as, but not limited to,plasma etching and the like.

In one embodiment, each of the plurality of electrodes 70 comprises atleast one noble metal, such as, but not limited to, platinum, gold,silver, and combinations thereof. In another embodiment, each of theplurality of electrodes 70 comprises at least one of tungsten, niobium,tantalum, and combinations thereof. Alternatively, each of the pluralityof electrodes 70 further comprises a catalyst 180, such as at least oneof gold, nickel, iron, chromium, cobalt, combinations thereof, and thelike. In one embodiment, the step of forming a plurality of electrodes70 comprises spinning a photoresist onto substrate 40, defining patternsin the photoresist using photolithographic methods that are known in theart, and then removing portions of the patterned photoresist, leavingbehind exposed portions of substrate 40. An ashing and/or buffered oxideetch process may be used to clean the exposed portions of substrate 40.Electrode material is then deposited on the exposed portions ofsubstrate 40, using vapor deposition techniques that are known in theart, such as physical vapor deposition (PVD), and the like. Anyremaining photoresist is then removed using lift-off techniques known inthe art. An array of gold electrodes 70 deposited on a silicon substrate40 by this method is shown in FIG. 4.

In another embodiment, a film of catalyst 180 is deposited on at leastone of the plurality of electrodes 70. Catalyst 180 comprises at leastone of gold, nickel, iron, chromium, cobalt, and combinations thereof.In one embodiment, catalyst 180 comprises at least one noble metal. Thefilm of catalyst 180 has a thickness in a range from about 10 Angstromsto about 120 Angstroms. More preferably, the film of catalyst 180 has athickness in a range from about 30 Angstroms to about 100 Angstroms. Thefilm of catalyst 180 is deposited using at least one of electron-beamevaporation, laser ablation, radio frequency (rf) sputtering, plasmasputtering, molecular beam epitaxy, chemical vapor deposition, physicalvapor deposition, metal organic chemical vapor deposition, andcombinations thereof. Alternatively, catalyst may be deposited byspin-coating a slurry of nanoparticles of catalyst 180 onto a surface ofthe plurality of electrodes 70.

At least one nano-wire 140 is then grown from an edge of a firstelectrode 60. The at least one nano-wire 140 comprises at least one of asemi-conductor, a carbide, an oxide, a nitride, a boride, andcombinations thereof. In one embodiment, the at least one nano-wirecomprises a semi-conductor, wherein the semi-conductor comprises atleast one of silicon, germanium, a III-V compound, a II-VI compound, aIV-VI compound, and combinations thereof. In another embodiment, the atleast one nano-wire comprises 140 a carbide, wherein the carbidecomprises at least one of silicon carbide, niobium carbide, molybdenumcarbide, tantalum carbide, hafnium carbide, tungsten carbide, andcombinations thereof. FIG. 5 is a micrograph showing a plurality ofnano-wires 140 grown from first electrode 60 and extending toward secondelectrode 80.

In one embodiment of the present invention, the step of growing at leastone nano-wire 140 from an edge of first electrode 60 comprises heatingthe electrode structure, which comprises substrate 40, plurality ofelectrodes 70 formed thereon, and catalyst 180 to a predeterminedtemperature in the presence of a metal containing vapor. The at leastone nano-wire 140 grows from catalyst 180 via one of a vapor-solid and avapor-liquid-solid (VLS) growth mechanism in which catalyst 180 acts asa seed for growing nano-wire 140. In one embodiment, the electrodestructure is heated to a predetermined temperature in the presence of atleast one additional reactive gas. The composition of the at least oneadditional reactive gas depends upon the desired composition of theplurality of nano-wires. In order to obtain nano-wires comprising anitride, for example, the electrode structure is heated in the presenceof ammonia and a metal-containing vapor. Similarly, the electrodestructure is heated in the presence of ammonia and a metal-containingvapor oxygen to obtain oxide nano-wires. To obtain carbide nano-wires,the electrode structure is heated in the presence of a metal-containingvapor and at least one hydrocarbon, such as methane or the like, toobtain carbide nano-wires.

In one embodiment, the step of heating the electrode structure to apredetermined temperature comprises at least one heating period, a dwelltime at the predetermined temperature, and a cooling period during whichthe metal vapor condenses on the electrode structure and the electrodestructure is returned to room temperature. Heating and cooling of theelectrode structure may be carried out at a controlled, predeterminedrate. Multiple heating periods at different predetermined temperaturesmay also be used to grow the at least one nano-wire 140. The nano-wiresmay be grown by heating the electrode structure in a furnace such as avacuum tube furnace, a muffle furnace, an annealing furnace, acontrolled environment furnace, combinations thereof, and the like. Thepredetermined temperature that is used to grow the at least onenano-wire 140 depends on the desired composition of the at least onenano-wire. Generally, the at least one nano-wire 140 is grown at atemperature in a range from about 500° C. to about 1400° C. In anotherembodiment, the at least one nano-wire 140 is grown at a temperature ina range from 750° C. to about 1100° C. In one particular embodiment, theat least one nano-wire 140 is grown by heating the electrode assembly toa temperature of about 1200° C. The metal-containing vapor sourcecomprises at least one of a semi-conductor, a carbide, an oxide, anitride, a boride, a metal iodide, a metal bromide, a metal-organicliquid or vapor, a metal hydride, a metal chloride, a metal in elementalform, and combinations thereof.

The at least one nano-wire 140 grows from an edge of the first electrode60, with catalyst 180 facilitating growth at the predeterminedtemperature in the presence of a metal containing vapor. The at leastone nano-wire 140 may, in one embodiment, grow to and contact secondelectrode 80. Alternatively, a contact between the at least onenano-wire 140 and second electrode 80 is established by catalyst 180,which remains attached to the end of the at least one nano-wire 140, asshown in FIG. 1. Contact between the at least one nano-wire 140 andsecond electrode 80 can also be established by lithographicallydepositing a conductive element to establish contact between the atleast one nano-wire 140 and second electrode 80, as shown in FIG. 1.

The following example is included to illustrate the various features andadvantages of the present invention, and is not intended to limit theinvention in any way.

EXAMPLE 1

In illustration, a silicon substrate (Si <111>) substrate is cleaned ina standard “piranha” or keros bath (sulfuric acid) to obtain a thinnative oxide layer on the substrate. Photoresist is spun onto thesubstrate, patterns are defined thereon using photolithography, and thepatterns are cleaned with an ashing and buffered oxide etch process toremove the native oxide in the patterns. Metallic gold (Au) having athickness of 30-100 Å is deposited by electron-beam evaporation. Thesubstrate is placed in a vacuum tube furnace with a metal vapor sourcefor growing nano-rods. For growing zinc oxide nano-rods, ZnO is groundand mixed with carbon powder in a stoichiometric molar ratio of 1:1.While simple vapor transport by carbothermal reduction processes areused as the source for growing nano-rods, other techniques, such aslaser ablation, evaporation, chemical vapor deposition (CVD), metalorganic chemical vapor deposition (MOCVD), and combinations thereof areequally acceptable. In the case of ZnO, the furnace is heated to atemperature in range from about 890° C. to about 1000° C. for a timeperiod ranging from about 1 minute to about 30 minutes and then allowedto cool. The actual dwell time period at the predetermined temperatureis long enough to permit the at least one nano-wire 140 to grow to alength that is sufficient to connect first electrode 60 to secondelectrode 80, or to substantially cover the distance separating firstelectrode 60 from second electrode 80.

On cooling, the patterned feature breaks into “islands” with ZnOnano-rods found at the edge of these islands. The mechanism for theformation of the islands is believed to be selective diffusion of the Aucatalyst into the underlying Si substrate except for the edge, thatcauses an etch step. The effect of a surface energy interaction with thenative oxide at the edge of the patterns may also play a role in theprocess. Various strategies and approaches to engineer catalystinteraction for growing nano-wires and obtaining selective growth ofnano-wires in precise locations is provided by the present invention.Various external fields, including well-defined gas flow, electricfield, and magnetic fields applied in situ during synthesis are used toalign the nano-wires across electrodes in configurations such as but notlimited to core-shell structures, hetero-epitaxial nano-wires, GATEdielectric devices, biosensors, chemical sensors, artificial nose,cross-bar arrays and NEMS devices, and combinations thereof.

The method also provides for placement of nano-rods and nano-wireswithin a device architecture without having to independently synthesizethe nano-rods and nano-wires. The invention is applicable to anysuitable combination of substrate, catalyst, and nano-wire as may beknown to one skilled in the art. Embodiments of the invention teach thegrowth of nano-wires at the edge of micron scale features forintegration with larger scale structures; the devices and thefabrication processes for making the nano-wire; a cross-bar architecture300 fabricated per the disclosed method as shown in FIG. 6, and the useof a bilayer nano-wire that is the selectively etched to make a NEMSdevice.

While typical embodiments have been set forth for the purpose ofillustration, the foregoing description should not be deemed to be alimitation on the scope of the invention. Accordingly, variousmodifications, adaptations, and alternatives may occur to one skilled inthe art without departing from the spirit and scope of the presentinvention.

1. An electronic device, said electronic device comprising: a) at leastone substrate; b) a plurality of electrodes, wherein said plurality ofelectrodes are disposed on said substrate; and c) at least onenano-wire, wherein said nano-wire grows from an edge of a firstelectrode to an edge of a second electrode.
 2. The electronic deviceaccording to claim 1, wherein said at least one substrate comprises atleast one of a semi-conducting material, an insulating material, andcombinations thereof.
 3. The electronic device according to claim 2,wherein said semi-conducting material comprises at least one of silicon,germanium, indium tin oxide, silicon carbide, and combinations thereof.4. The electronic device according to claim 2, wherein said insulatingmaterial comprises at least one of a metal oxide and diamond.
 5. Theelectronic device according to claim 4, wherein said metal oxidecomprises at least one of magnesium oxide, sapphire, lithium aluminateand combinations thereof.
 6. The electronic device according to claim 1,wherein said at least one electrode comprises at least one noble metal.7. The electronic device according to claim 6, wherein said at least onenoble metal comprises at least one of platinum, gold, silver, andcombinations thereof.
 8. The electronic device according to claim 1,wherein said at least one electrode comprises at least one of tungsten,niobium, tantalum, and combinations thereof.
 9. The electronic deviceaccording to claim 1, wherein said at least one electrode comprises acatalyst.
 10. The electronic device according to claim 9, wherein saidcatalyst comprises at least one of gold, nickel, iron, chromium, cobalt,and combinations thereof.
 11. The electronic device according to claim1, wherein said at least one nano-wire comprises at least one of asemi-conductor, a carbide, an oxide, a nitride, a boride, andcombinations thereof.
 12. The electronic device according to claim 11,wherein said semi-conductor comprises at least one of silicon,germanium, a III-V compound, a II-VI compound, a IV-VI compound, andcombinations thereof.
 13. The electronic device according to claim 11,wherein said carbide comprises at least one of silicon carbide, niobiumcarbide, molybdenum carbide, tantalum carbide, hafnium carbide, tungstencarbide, and combinations thereof.
 14. The electronic device accordingto claim 1, wherein said at least one nano-wire is orientedperpendicular to said first electrode.
 15. The electronic deviceaccording to claim 14, wherein said at least one nano-wire is orientedby at least one of an electric field, a magnetic field, and combinationsthereof.
 16. The electronic device according to claim 14, wherein saidat least one nano-wire is oriented by a gas flow.
 17. The electronicdevice according to claim 1, wherein said at least one nano-wire iscoupled to said second electrode by a catalytic particle.
 18. Theelectronic device according to claim 1, wherein said at least onenano-wire is coupled to said second electrode by a lithographicallypatterned electrode film.
 19. The electronic device according to claim1, wherein said at least one nano-wire is a nano-ribbon.
 20. Theelectronic device according to claim 1, wherein said at least onenano-wire has a diameter in a range from about 5 nm to about 300 nm. 21.The electronic device according to claim 20, wherein said at least onenano-wire has a diameter in a range from about 5 nm to about 100 nm. 22.The electronic device according to claim 1, wherein said at least onenano-wire has a length in a range from about 50 nm to about 50,000 nm.23. The electronic device according to claim 22, wherein said at leastone nano-wire has a length in a range from about 200 nm to about 20,000nm.
 24. The electronic device according to claim 1, wherein said devicecomprises a portion of at least one of a core-shell structure, ahetero-epitaxial nano-wire, a GATE dielectric device, a biosensor, achemical sensor, an artificial nose, a cross-bar arrays, anano-electromechanical system (NEMS) device, a transistor, aphoto-detector, a light emitting diode (LED), a super-conducting device,a laser device, and combinations thereof.
 25. The electronic device ofclaim 1, wherein said at least one nano-wire comprises a plurality ofnano-wires.
 26. The electronic device of claim 25, wherein saidplurality of nano-wires comprise an architecture.
 27. The electronicdevice of claim 26, wherein said architecture comprises a cross-bararchitecture of nano-wires.
 28. An electrode structure comprising: a) atleast one electrode, said at least one electrode having at least oneedge portion; and b) at least one nano-wire originating from said edgeportion.
 29. The electrode structure according to claim 28, wherein saidat least one electrode comprises at least one noble metal.
 30. Theelectrode structure according to claim 29, wherein said at least onenoble metal comprises at least one of platinum, gold, silver, andcombinations thereof.
 31. The electrode structure according to claim 28,wherein said at least one electrode comprises at least one of tungsten,niobium, tantalum, and combinations thereof.
 32. The electrode structureaccording to claim 28, wherein said at least one electrode comprises acatalyst.
 33. The electrode structure according to claim 32, whereinsaid catalyst comprises at least one of gold, nickel, iron, chromium,cobalt, and combinations thereof.
 34. The electrode structure accordingto claim 28, wherein said at least one nano-wire comprises at least oneof a semi-conductor, a carbide, an oxide, a nitride, a boride, andcombinations thereof.
 35. The electrode structure according to claim 34,wherein said semi-conductor comprises at least one of silicon,germanium, a III-V compound, a II-VI compound, a IV-VI compound, andcombinations thereof.
 36. The electrode structure according to claim 34,wherein said carbide comprises at least one of silicon carbide, niobiumcarbide, molybdenum carbide, tantalum carbide, hafnium carbide, tungstencarbide, and combinations thereof.
 37. The electrode structure accordingto claim 28, wherein said at least one nano-wire is orientedperpendicular to said at least one electrode.
 38. The electrodestructure according to claim 28, wherein said at least one nano-wire isoriented by at least one of an electric field, a magnetic field, andcombinations thereof.
 39. The electrode structure according to claim 28,wherein said at least one nano-wire is oriented by a gas flow.
 40. Theelectrode structure according to claim 28, wherein said at least onenano-wire is coupled to said at least one electrode by a catalyticparticle.
 41. The electrode structure according to claim 28, whereinsaid at least one nano-wire is coupled to said at least one electrode bya lithographically patterned electrode film.
 42. The electrode structureaccording to claim 28, wherein said at least one nano-wire is anano-ribbon.
 43. The electrode structure according to claim 28, whereinsaid at least one nano-wire has a diameter in a range from about 5 nm toabout 300 nm.
 44. The electrode structure according to claim 43, whereinsaid at least one nano-wire has a diameter in a range from about 5 nm toabout 100 nm.
 45. The electrode structure according to claim 28, whereinsaid at least one nano-wire has a length in a range from about 50 nm toabout 50,000 nm.
 46. The electrode structure according to claim 45,wherein said at least one nano-wire has a length in a range from about200 nm to about 20,000 nm.
 47. The electrode structure according toclaim 28, wherein said structure comprises at least one of a core-shellstructure, a hetero-epitaxial nano-wire, a GATE dielectric device, abiosensor, a chemical sensor, an artificial nose, a cross-bar arrays, anano-electromechanical system (NEMS) device, a transistor, aphoto-detector, a light emitting diode (LED), a super-conducting device,a laser device, and combinations thereof.
 48. The electrode structure ofclaim 28, wherein said at least one nano-wire comprises a plurality ofnano-wires.
 49. The electrode structure of claim 48, wherein saidplurality of nano-wires comprise an architecture.
 50. The electrodestructure of claim 49, wherein said architecture comprises a cross-bararchitecture of nano-wires.
 51. An electronic device, said electronicdevice comprising: a) at least one substrate, said at least onesubstrate comprising at least one of a semi-conducting material, aninsulating material, and combinations thereof; and b) an electrodestructure disposed on said substrate, said electrode structurecomprising a plurality of electrodes and at least one nano-wire, whereinsaid nano-wire originates from an edge portion of a first electrode andextends to an edge of a second electrode.
 52. The electronic deviceaccording to claim 51, wherein said semi-conducting material comprisesat least one of silicon, germanium, indium tin oxide, silicon carbide,and combinations thereof.
 53. The electronic device according to claim51, wherein said insulating material comprises at least one of a metaloxide and diamond.
 54. The electronic device according to claim 53,wherein said metal oxide comprises at least one of magnesium oxide,sapphire, lithium aluminate and combinations thereof.
 55. The electronicdevice according to claim 51, wherein said at least one electrodecomprises at least one noble metal.
 56. The electronic device accordingto claim 55, wherein said at least one noble metal comprises at leastone of platinum, gold, silver, and combinations thereof.
 57. Theelectronic device according to claim 51, wherein said at least oneelectrode comprises at least one of tungsten, niobium, tantalum, andcombinations thereof.
 58. The electronic device according to claim 51,wherein said at least one electrode comprises a catalyst.
 59. Theelectronic device according to claim 58, wherein said catalyst comprisesat least one of gold, nickel, iron, chromium, cobalt, and combinationsthereof.
 60. The electronic device according to claim 51, wherein saidat least one nano-wire comprises at least one of a semi-conductor, acarbide, an oxide, a nitride, a boride, and combinations thereof. 61.The electronic device according to claim 60, wherein said semi-conductorcomprises at least one of silicon, germanium, a III-V compound, a II-VIcompound, a IV-VI compound, and combinations thereof.
 62. The electronicdevice according to claim 60, wherein said carbide comprises at leastone of silicon carbide, niobium carbide, molybdenum carbide, tantalumcarbide, hafnium carbide, tungsten carbide, and combinations thereof.63. The electronic device according to claim 51, wherein said at leastone nano-wire is oriented perpendicular to said first electrode.
 64. Theelectronic device according to claim 63, wherein said at least onenano-wire is oriented by at least one of an electric field, a magneticfield, and combinations thereof.
 65. The electronic device according toclaim 63, wherein said at least one nano-wire is oriented by a gas flow.66. The electronic device according to claim 51, wherein said at leastone nano-wire is coupled to said second electrode by a catalyticparticle.
 67. The electronic device according to claim 51, wherein saidat least one nano-wire is coupled to said second electrode by alithographically patterned electrode film.
 68. The electronic deviceaccording to claim 51, wherein said at least one nano-wire is anano-ribbon.
 69. The electronic device according to claim 51, whereinsaid at least one nano-wire has a diameter in a range from about 5 nm toabout 300 nm.
 70. The electronic device according to claim 69, whereinsaid at least one nano-wire has a diameter in a range from about 5 nm toabout 100 nm.
 71. The electronic device according to claim 51, whereinsaid at least one nano-wire has a length in a range from about 50 nm toabout 50,000 nm.
 72. The electronic device according to claim 71,wherein said at least one nano-wire has a length in a range from about200 nm to about 20,000 nm.
 73. The electronic device according to claim51, wherein said device comprises a portion of at least one of acore-shell structure, a hetero-epitaxial nano-wire, a GATE dielectricdevice, a biosensor, a chemical sensor, an artificial nose, a cross-bararrays, a nano-electromechanical system (NEMS) device, a transistor, aphoto-detector, a light emitting diode (LED), a super-conducting device,and, a laser device, combinations thereof.
 74. The electronic device ofclaim 51, wherein said at least one nano-wire comprises a plurality ofnano-wires.
 75. The electronic device of claim 74, wherein saidplurality of nano-wires comprise an architecture.
 76. The electronicdevice of claim 75, wherein said architecture comprises a cross-bararchitecture of nano-wires.
 77. A method for making an electrodestructure, wherein the electrode structure comprises at least onesubstrate, a plurality of electrodes disposed on the substrate, and atleast one nano-wire originating from an edge of a first electrode andextending to an edge of a second electrode, the method comprising thesteps of: a) providing the substrate; b) forming a plurality ofelectrodes on the substrate; c) growing the at least one nano-wire fromthe edge of the first electrode; and d) connecting the at least onenano-wire to the edge of the second electrode.
 78. The method accordingto claim 77, wherein the substrate comprises at least one of asemi-conducting material, an insulating material, and combinationsthereof.
 79. The method according to claim 78, wherein thesemi-conducting material comprises at least one of silicon, germanium,indium tin oxide, silicon carbide, and combinations thereof.
 80. Themethod according to claim 78, wherein the insulating material comprisesat least one of a metal oxide and diamond.
 81. The method according toclaim 80, wherein the metal oxide comprises at least one of magnesiumoxide, sapphire, lithium aluminate and combinations thereof.
 82. Themethod according to claim 77, wherein the step of providing thesubstrate further includes cleaning the substrate.
 83. The methodaccording to claim 77, wherein the step of forming a plurality ofelectrodes further comprises the steps of: a) depositing a photoresistfilm onto a surface of the substrate; b) defining a plurality ofpatterns on the photoresist film using photolithography; c) cleaning theplurality of patterns with an etch process to leave a plurality ofexposed portions of the substrate; and d) depositing an electrodematerial on the plurality of exposed portions of the substrate.
 84. Themethod according to claim 83, wherein the catalyst film comprises atleast one noble metal.
 85. The method according to claim 84, wherein theat least one noble metal comprises at least one of platinum, gold,silver, and combinations thereof.
 86. The method according to claim 83,wherein the catalyst film has a thickness in a range from about 10Angstroms to about 1000 Angstroms.
 87. The method according to claim 86,wherein the catalyst film has a thickness in a range from about 30Angstroms to about 100 Angstroms.
 88. The method according to claim 83,wherein the step of depositing the catalyst film comprises depositingthe catalyst using at least one of electron-beam evaporation, laserablation, rf sputtering, plasma sputtering, molecular beam epitaxy,chemical vapor deposition, physical vapor deposition, metal organicchemical vapor deposition, and combinations thereof.
 89. The methodaccording to claim 77, wherein the plurality of electrodes comprises atleast one of tungsten, niobium, tantalum, and combinations thereof. 90.The method according to claim 77, wherein the plurality of electrodescomprises a catalyst.
 91. The method according to claim 90, wherein thecatalyst comprises at least one of gold, nickel, iron, chromium, cobalt,and combinations thereof.
 92. The method according to claim 77, whereinthe at least one nano-wire comprises at least one of a semi-conductor, acarbide, an oxide, a nitride, a boride, and combinations thereof. 93.The method according to claim 92, wherein the semi-conductor comprisesat least one of silicon, germanium, a III-V compound, a II-VI compound,a IV-VI compound, and combinations thereof.
 94. The method according toclaim 92, wherein the carbide comprises at least one of silicon carbide,niobium carbide, molybdenum carbide, tantalum carbide, hafnium carbide,tungsten carbide, and combinations thereof.
 95. The method according toclaim 77, wherein the at least one nano-wire is oriented perpendicularto the first electrode.
 96. The method according to claim 95, whereinthe at least one nano-wire is oriented by at least one of an electricfield, a magnetic field, and combinations thereof.
 97. The methodaccording to claim 95, wherein the at least one nano-wire is oriented bya gas flow.
 98. The method according to claim 77, wherein the at leastone nano-wire is coupled to the second electrode by a catalyticparticle.
 99. The method according to claim 77, wherein the step ofconnecting the at least one nano-wire to the edge of the secondelectrode comprises coupling the at least one nano-wire to the secondelectrode by a lithographically patterned electrode film.
 100. Themethod according to claim 77, wherein the at least one nano-wire is anano-ribbon.
 101. The method according to claim 77, wherein the at leastone nano-wire has a diameter in a range from about 5 nm to about 300 nm.102. The method according to claim 101, wherein the at least onenano-wire has a diameter in a range from about 5 nm to about 100 nm.103. The method according to claim 77, wherein the at least onenano-wire has a length in a range from about 50 nm to about 50,000 nm.104. The method according to claim 103, wherein the at least onenano-wire has a length in a range from about 200 nm to about 20,000 nm.105. The method according to claim 77, wherein the step of growing atleast one nano-wire comprises heating the electrode structure to apredetermined temperature in the presence of a metal vapor source, andmaintaining the electrode structure at the predetermined temperature fora dwell time.
 106. The method according to claim 105, wherein thepredetermined temperature is in range from about 500° C. to about 1400°C.
 107. The method according to claim 106, wherein the predeterminedtemperature is in range from about 750° C. to about 1100° C.
 108. Themethod according to claim 105, wherein the metal vapor source comprisesat least one of a semi-conductor, a carbide, an oxide, a nitride, aboride, and combinations thereof.
 109. The method according to claim 77,wherein the electrode structure comprises a portion of at least one of acore-shell structure, a hetero-epitaxial nano-wire, a GATE dielectricdevice, a biosensor, a chemical sensor, an artificial nose, a cross-bararrays, a nano-electromechanical system (NEMS) device, a transistor, aphoto-detector, a light emitting diode (LED), a super-conducting device,a laser device, and combinations thereof.
 110. The method of claim 77,wherein the step of growing the at least one nano-wire from the edge ofthe first electrode comprises growing a plurality of nano-wires. 111.The electronic device of claim 110, wherein the plurality of nano-wirescomprises an architecture.
 112. The electronic device of claim 111,wherein the architecture further comprises a cross-bar architecture ofnano-wires.